SSM6L16FE 2007-11-01 1 toshiba field effect transistor silicon p/n channel mos type SSM6L16FE high speed switching applications analog switch applications ? small package ? low on-resistance q1: r on = 4 (max) (@v gs = 2.5 v) q2: r on = 12 (max) (@v gs = ? 2.5 v) q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc i d 100 drain current pulse i dp 200 ma q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gss 10 v dc i d -100 drain current pulse i dp -200 ma absolute maximum ratings (q1, q2 common) (ta = 25c) characteristics symbol rating unit drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e . operating temperature/current/volta ge, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.135 mm 2 6) unit: mm 1: source1 2: gate1 3: drain2 4: source2 5: gate2 6: drain1 jedec D jeita D toshiba 2-2n1d 0.3 mm 0.45 mm
SSM6L16FE 2007-11-01 2 marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static elec tricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. k 6 6 5 4 1 2 3 q1 q2 654 123
SSM6L16FE 2007-11-01 3 q1 electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 20 ? ? v drain cut-off current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.6 ? 1.1 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 10 ma 40 ? ? ms i d = 10 ma, v gs = 4 v ? 1.5 3.0 i d = 10 ma, v gs = 2.5 v ? 2.2 4.0 drain-source on-resistance r ds (on) i d = 1 ma, v gs = 1.5 v ? 5.2 15 input capacitance c iss ? 9.3 ? pf reverse transfer capacitance c rss ? 4.5 ? pf output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz ? 9.8 ? pf turn-on time t on ? 70 ? switching time turn-off time t off v dd = 3 v, i d = 10 ma, v gs = 0~2.5 v ? 125 ? ns switching time test circuit precaution v th can be expressed as the voltage between the gate an d source when the low operating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. in out (c) v out (b) v in (a) test circuit v dd 2.5 v 0 10 s 50 r l t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 3 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c
SSM6L16FE 2007-11-01 4 q2 electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 0.1 ma, v gs = 0 ?20 ? ? v drain cut-off current i dss v ds = ?20 v, v gs = 0 ? ? ?1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 0.1 ma ?0.6 ? ? 1.1 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ?10 ma 25 ? ? ms i d = ? 10 ma, v gs = ? 4 v ? 6 8 i d = ? 10 ma, v gs = ?2.5 v ? 8 12 drain-source on-resistance r ds (on) i d = ?1 ma, v gs = ?1.5 v ? 18 45 input capacitance c iss ? 11 ? pf reverse transfer capacitance c rss ? 3.7 ? pf output capacitance c oss v ds = ?3 v, v gs = 0, f = 1 mhz ? 10 ? pf turn-on time t on ? 130 ? switching time turn-off time t off v dd = ?3 v, i d = ? 10 ma, v gs = 0 ~ ?2.5 v ? 190 ? ns switching time test circuit precaution v th can be expressed as the voltage between gate and source when the low oper ating current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th .(the relationship can be established as follows: v gs (off) < v th < v gs (on). ) please take this into consideration when using the device. v dd = ?3 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 2.5v 10 s v dd out 50 r l (c) v out t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit
SSM6L16FE 2007-11-01 5 q1 (n-ch mosfet) i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? v gs r ds (on) ? ta v th ? ta drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (ma) gate-source voltage v gs (v) ambient temperature ta (c) ambient temperature ta (c) drain current i d (ma) drain current i d (ma) drain-source on-resistance r ds (on) ( ) drain-source on-resistance r ds (on) ( ) gate threshold voltage v th (v) drain-source on-resistance r ds (on) ( ) 2.5 v v gs = 1.5 v 0 1 4 12 1000 10 2 6 8 100 common source ta = 25c 10 4 v 0 0 100 250 12 1.5 0.5 50 150 200 v gs = 1.3 v 1.5 1.7 1.9 common source ta = 25c 3 4 10 2.5 2.3 2.1 04 1 0 8 26 0 2 6 1 4 5 3 25c ta = 100c ? 25c common source i d = 10 ma 02 3 1 0.01 1 1000 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c 0 2 8 6 4 2.5 v, 10 ma v gs = 1.5 v, i d = 1 ma common source ? 25 50 150 125 0 75 25 100 4 v, 10 ma common source i d = 0.1 ma v ds = 3 v ? 25 50 150 125 0 75 25 100 0 0.4 2 1.2 1.6 0.8
SSM6L16FE 2007-11-01 6 q1 (n-ch mosfet) ? y fs ? ? i d i dr ? v ds c ? v ds t ? i d drain current i d (ma) drain-source voltage v ds (v) drain-source voltage v ds (v) drain current i d (ma) drain reverse current i dr (ma) forward transfer admittance ? y fs ? (ms) switching time t (ns) capacitance c (pf) 1 10 100 1000 1 3 5 10 30 50 100 300 500 common source v ds = 3 v ta = 25c 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 common source v dd = 3 v v gs = 0~2.5 v ta = 25c t r t on t f t off 0 100 250 50 150 200 0 ? 1.4 ? 0.4 ? 0.2 ? 0.6 ? 0.8 ? 1 ? 1.2 common source v gs = 0 v ta = 25c g d s i dr c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c 0.3 10 100 1 5 50 0.1 1 10 100 5 50 0.5 30 3 0.5 3 30 0.3
SSM6L16FE 2007-11-01 7 q2 (p-ch mosfet) i d ? v gs gate - source voltage v gs (v) drain current i d (ma) -0.01 0 -1 -1000 -2 -4 -3 -1 -0.1 -10 -100 ta = 100c common source v ds = -3 v ? 25c 25c i d ? v ds drain - source voltage v ds (v) drain current i d (ma) 0 0 -100 -250 -1 -2 -1.5 -0.5 -50 -150 -200 v gs = -1.5 v -2.3 -2.5 -2.7 common source ta = 25c -3 -4 -10 -2.1 -1.9 -1.7 r ds (on) ? v gs gate - source voltage v gs (v) drain ? source on-resistance r ds (on) ( ) -10 -8 -6 -4 -2 0 0 25 common source i d = -1 ma ta=100 6 .4 20 1.2 1.6 10 8 1.4 1.8 2 -25 drain current i d (ma) drain ? source on-resistance r ds (on) ( ) 0 -1 10 -1000 -10 5 15 20 -100 25 r ds (on) ? i d v gs = -1.5 v -4 v -2.5 v 0 ? 25 10 40 50 150 125 0 5 25 30 75 20 -2.5 v, -10ma v gs =? 1.5 v, id=-1ma common source 15 35 25 100 r ds (on) ? ta ambient temperature ta (c) drain ? source on-resistance r ds (on) ( ) -4v, -10ma v th ? ta ambient temperature ta (c) gate threshold voltage v th (v) 0 ? 25 -0.4 -2 50 150 125 0 -0.2 -1.2 -1.6 75 -1 common source i d = -0.1 ma v ds = -3 v -0.8 -1.8 25 100 -0.6 -1.4
SSM6L16FE 2007-11-01 8 q2 (p-ch mosfet) ? y fs ? ? i d i dr ? v ds drain current i d (ma) drain - source v ds (v) drain - source voltage vds (v) drain current i d (ma) drain reverse current i dr (ma) forward transfer admittance ? y fs ? (s) switching time t (ns) capacitance c (pf) 10 -0.1 100 300 10000 1000 -100 -1 -10 30 50 500 3000 5000 common source v dd = -3 v v gs = 0~-2.5 v ta = 25c t r t on t f t off -0.1 10 200 100 -100 -1 -10 common source v gs = 0 v f = 1 mhz ta = 25c c rss c oss c iss 1 -1 10 30 1000 100 -1000 -10 -100 3 5 50 300 500 common source v ds =?3 v ta = 25c 0 0 -100 -250 1.4 0.4 -50 -150 -200 0.2 0.6 0.8 1 1.2 common source v gs = 0 v ta = 25c g d s i dr c ? v ds t ? i d 1 0 0 100 250 160 40 50 150 200 20 60 80 100 140 120 p d ? ta ambient temperature ta (c) drain power dissipation p d (mw) mounted on fr4 board (25.4mmx25.4mmx1.6t cu pad:0.6mm2x3 common characteristics
SSM6L16FE 2007-11-01 9 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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